HN1D01FE 2004-06-25 1 toshiba diode silicon epitaxial planar type HN1D01FE ultra high speed switching application hn1d02fu is composed of 2 unit of cathode common. low forward voltage : v f (3) = 0.92v (typ.) fast reverse recovery time : t rr = 1.6ns (typ.) small total capacitance : c t = 2.2pf (typ.) maximum ratings (ta = 25 c) characteristic symbol rating unit maximum (peak) reverse voltage v rm 85 v reverse voltage v r 80 v maximum (peak) forward current i fm 300* ma average forward current i o 100* ma surge current (10ms) i fsm 2* a power dissipation p 100** mw junction temperature t j 150 c storage temperature t stg ? 55~150 c *: these are the maximum ratings for a single diode (q1, q2, q3 or q4). where unit 1 and unit 2 are used independently or simultaneously, the maximum ratings per diode are 75% of those for a single diode. ** : total rating. electrical characteristics (q1, q2, q3, q4 common; ta = 25 c) characteristic symbol test circuit test condition min typ. max unit v f (1) D i f = 1ma D 0.61 D v f (2) D i f = 10ma D 0.74 D forward voltage v f (3) D i f = 100ma D 0.92 1.20 v i r (1) D v r = 30v D D 0.1 reverse current i r (2) D v r = 80v D D 0.5 a total capacitance c t D v r = 0, f = 1mhz D 2.2 D pf reverse recovery time t rr D i f = 10ma (fig.1) D 1.6 D ns 1. cathode 2. cathode 3. anode 4. cathode 5. cathode 6. anode jedec D jeita D toshiba 1-2x1a weight: 0.003g (typ.) unit in mm
HN1D01FE 2004-06-25 2 pin assignment (top view) marking fig. 1 reverse recovery time (t rr ) test circuit unit 1 unit 2 1 2 3 4 6 q1 5 q2 q4 q3 a2
HN1D01FE 2004-06-25 3 10u 100n a 10n a 1n a 1u (a)
HN1D01FE 2004-06-25 4 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to im prove the quality and relia bility of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619ea a restrictions on product use
|
